Sanyo Electric Co., Ltd.

Takashi Kurose

Shigeharu Matsushita

Takashi Yamada

Yasoo Harada

Takayoshi Higashino

Emi Fujii

Satoshi Terada

Akihito Nagamatsu

Daijirou Inoue

Kouji Matsumura

A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

Method of doping, semiconductor device, and method of fabricating

A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.

Method of doping a group III-V compound semiconductor

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Moriguchi, Japan

Takashi Kurose