Company Filing History:

39 out of 16,612

Semiconductor Energy Laboratory Co., Ltd.

where one patent can have more than one assignee

Years Active: 1988-2009

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39 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7507615 - Method of manufacturing gate insulated field effect transistors (2009-03-24),

2. 6566175 - Method of manufacturing gate insulated field effect transistors (2003-05-20),

3. 6550325 - Electric device and method of driving the same (2003-04-22),

4. 6520189 - CVD apparatus (2003-02-18),

5. 6261877 - Method of manufacturing gate insulated field effect transistors (2001-07-17),

6. 6177302 - Method of manufacturing a thin film transistor using multiple sputtering chambers (2001-01-23),

7. 6013338 - CVD apparatus (2000-01-11),

8. 5855970 - Method of forming a film on a substrate (1999-01-05),

9. 5717215 - Electronic device for reading information stored in a substance (1998-02-10),

10. 5670777 - Photosensitive device and two frequency driving method thereof (1997-09-23),

11. 5629245 - Method for forming a multi-layer planarization structure (1997-05-13),

12. 5622607 - Method of forming an oxide insulating film (1997-04-22),

13. 5622586 - Method of fabricating device made of thin diamond foil (1997-04-22),

14. 5610405 - Electronic device for measuring light properties (1997-03-11),

15. 5608666 - Optical memory apparatus using first and second illuminating lights for (1997-03-04),

Title: The Innovative Journey of Takashi Inushima: Pioneering Thin Film Field Effect Transistors

Introduction:

Takashi Inushima, a prolific inventor hailing from Kanagawa, Japan, has left a significant mark in the realm of semiconductor technology with his groundbreaking innovations. With an impressive portfolio of 39 patents under his name, his contributions have revolutionized the manufacturing processes of thin film field effect transistors.

Latest Patents:

Among his latest patents is a method of manufacturing gate insulated field effect transistors. This method involves depositing an amorphous semiconductor film in a sputtering apparatus, followed by thermal treatment to convert the film to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a separate sputtering apparatus, ensuring the precise construction of these crucial components.

Career Highlights:

Takashi Inushima has garnered invaluable experience through his tenure at esteemed companies such as Semiconductor Energy Laboratory Co., Ltd. and TDK Corporation. His expertise and dedication have propelled him to the forefront of semiconductor research and development, shaping the future of electronic devices.

Collaborations:

Throughout his career, Inushima has collaborated closely with esteemed colleagues such as Shunpei Yamazaki and Mitsunori Sakama. Their collective efforts have led to the realization of cutting-edge technologies and innovative solutions in the field of semiconductor engineering.

Conclusion:

In conclusion, Takashi Inushima stands as a visionary inventor whose contributions have redefined the landscape of semiconductor manufacturing. His relentless pursuit of excellence and passion for innovation continue to inspire future generations of inventors and engineers to push the boundaries of technological advancement.

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