The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Mar. 31, 2003
Shunpei Yamazaki, Kanagawa-ken, JP;
Hongyong Zhang, Kanagawa-ken, JP;
Takashi Inushima, Kanagawa-ken, JP;
Takeshi Fukada, Kanagawa-ken, JP;
Shunpei Yamazaki, Kanagawa-ken, JP;
Hongyong Zhang, Kanagawa-ken, JP;
Takashi Inushima, Kanagawa-ken, JP;
Takeshi Fukada, Kanagawa-ken, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Abstract
A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.