The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1997
Filed:
Nov. 15, 1991
Applicant:
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Takashi Inushima, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419215 ; 20419222 ; 20419223 ; 438151 ; 438788 ; 438910 ;
Abstract
A process for fabricating films improved in interface characteristics, which comprises depositing an oxide insulating film by sputtering under an irradiation of a light in an atmosphere comprising an oxidative gas at an amount larger than that of an inactive gas is disclosed. Particularly, a light having a wavelength of 300 nm or shorter is used for the irradiation.