Semiconductor Energy Laboratory Co., Ltd.

Tdk Corporation

Takashi Inushima

Shunpei Yamazaki

Mitsunori Sakama

Shigenori Hayashi

Toshimitsu Konuma

Akira Mase

Takeshi Fukada

Naoki Hirose

Rimantas Vaitkus

Toru Takayama

Hongyong Zhang

Satoshi Teramoto

Naoya Sakamoto

Shinji Imatou

Mitsunori Tsuchiya

Masakazu Odaka

Atsushi Kawano

Toshiji Hamatani

Minoru Miyazaki

Kazuhisa Nakashita

Kenji Itou

Nobumitsu Amachi

Michio Arai

Yukio Yamauchi

Isamu Kobori

Mitsufumi Codama

Ichiro Takayama

Kazushi Sugiura

Masaaki Hiroki

Kenji Itoh

Eiji Sato

Masaya Kadono

Vaitkus Rimantas

A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

Method of manufacturing gate insulated field effect transistors

A thermistor layer made of platinum is formed on a thin diamond film. An amount of heat carried away from the diamond film by a fluid is detected as a change in the temperature of the thermistor layer. The rear side of the diamond film is kept in contact with the fluid to prevent the material of the thermistor from being corroded by the fluid. In another aspect of the invention, a heating element and a thermistor are formed on one surface of a thin diamond film. The other surface is kept in contact with a fluid. The diamond film is heated by the heating element in a quite short time of about 0.2 second. The resulting response characteristics of the diamond film are detected by the thermistor. The flow rate is calculated from the response characteristics.

Electric device and method of driving the same

An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.

CVD apparatus

Method of manufacturing a thin film transistor using multiple sputtering chambers

Method of forming a film on a substrate

An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with first light having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with second light having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.

Electronic device for reading information stored in a substance

An electronic device utilizing a material having: a photoconductive effect; a trap level for trapping an excited carrier; and an energy band gap, the device comprising: a means for illuminating the material with a first light, the first light having a wavelength corresponding to an energy higher than the energy band gap of the material; a means for illuminating the material with a second light, the second light having a wavelength corresponding to an energy lower than the energy band gap of the material; a means for measuring the quantity of second light transmitted through the material; and a means for obtaining information on the first light illuminated to the material from the quantity of the transmitted second light.

Photosensitive device and two frequency driving method thereof

Method for forming a multi-layer planarization structure

Method of fabricating a device made of a thin diamond film having a thickness of less than 10 .mu.m which is difficult to handle. The method is initiated by forming a thin diamond film on a silicon substrate to a thickness of about 5 .mu.m by chemical vapor deposition. Then, paraffin is applied. The substrate is removed with hydrofluoric acid. Thus, the diamond film is retained on the paraffin that is made to act as a base. A required circuit is formed on the surface of the diamond film. Finally, the paraffin is removed. In this way, a device using the diamond film is completed. This structure can be used as a device for measuring thermal effect, using a thin diamond film. For example, the structure can be used for fabrication of a flowsensor.

Method of fabricating device made of thin diamond foil

A process for fabricating films improved in interface characteristics, which comprises depositing an oxide insulating film by sputtering under an irradiation of a light in an atmosphere comprising an oxidative gas at an amount larger than that of an inactive gas is disclosed. Particularly, a light having a wavelength of 300 nm or shorter is used for the irradiation.

Method of forming an oxide insulating film

An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first electromagnetic emission, (which may include visible light, ultraviolet light, gamma rays, or x-rays) having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with a second electromagnetic emission having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first emission can be known by measuring the induced photocurrent.

Electronic device for measuring light properties

An electronic apparatus comprising a material having a photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first light having photon energies greater than the energy bandgap of the material. Then, the material is illuminated with a second light having photon energies smaller than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.

Optical memory apparatus using first and second illuminating lights for

Growing community of inventors

Kanagawa, Japan

Takashi Inushima