Yokohama, Japan

Takamichi Kasai


Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 168(Granted Patents)


Location History:

  • Ichikawa, JP (1997)
  • Kawasaki, JP (2001)
  • Yokohama, JP (2007 - 2012)

Company Filing History:


Years Active: 1997-2012

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8 patents (USPTO):Explore Patents

Title: The Innovations of Takamichi Kasai

Introduction

Takamichi Kasai is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on nonvolatile semiconductor storage devices, which are crucial for modern electronic applications.

Latest Patents

Among his latest patents is a nonvolatile semiconductor storage device with multiple well regions and a shared bit line. This invention includes a first well region of a first conductivity type, a second well region of the first conductivity type, and a third well region of a second conductivity type. The device features a bit line connected to memory cells in both the first and second cell arrays, along with a column decoder. Another notable patent is a non-volatile semiconductor storage device with an address search circuit used when writing. This device includes a memory cell array with non-volatile memory cells and a control circuit that manages the writing of data based on the address output from the address search circuit.

Career Highlights

Takamichi Kasai is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to innovate and develop advanced semiconductor solutions that enhance data storage capabilities.

Collaborations

Takamichi has collaborated with notable coworkers, including Nozomi Kasai and Hideo Kato. Their combined expertise contributes to the innovative environment at Toshiba.

Conclusion

Takamichi Kasai's contributions to semiconductor technology through his patents and work at Toshiba highlight his role as a key inventor in the field. His innovations continue to impact the development of nonvolatile storage solutions.

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