The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2012

Filed:

Sep. 15, 2010
Applicants:

Takamichi Kasai, Yokohama, JP;

Yoshiharu Hirata, Yokohama, JP;

Kazuaki Isobe, Yokohama, JP;

Akira Umezawa, Tokyo, JP;

Inventors:

Takamichi Kasai, Yokohama, JP;

Yoshiharu Hirata, Yokohama, JP;

Kazuaki Isobe, Yokohama, JP;

Akira Umezawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a nonvolatile semiconductor storage device includes a first well region of a first conductivity type, a second well region of the first conductivity type, a third well region of a second conductivity type, a bit line and a column decoder. A first cell array including a plurality of memory cells is formed in the first well region. A second cell array including a plurality of memory cells is formed in the second well region. The third well region includes the first and second well regions. The bit line is connected to the memory cells included in the first cell array and the memory cells included in the second cell array. The column decoder is connected to the bit line.


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