Gunma, Japan

Takahiro Oikawa

This inventor holds 7 USPTO granted patents. Top assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC, Sanyo Semiconductor Manufacturing Co., Ltd.. Active years: 2010-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takahiro Oikawa. Retrieved from https://idiyas.com/inventor/takahiro-oikawa-aymhbdvh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 4

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 2010-2014

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7 patents (USPTO):Explore Patents

Title: Takahiro Oikawa: Innovator in Semiconductor Technology

Introduction

Takahiro Oikawa is a prominent inventor based in Gunma, Japan, known for his significant contributions to semiconductor technology. With a total of seven patents to his name, Oikawa has made remarkable advancements in the field, particularly in the design and manufacturing of semiconductor devices.

Latest Patents

Oikawa's latest patents include a semiconductor device covered by a front electrode layer and a back electrode layer. This invention addresses the issue of warping in semiconductor devices due to heat during usage. It also prevents defects such as peeling of the resist layer used as a plating mask and issues with the formation of the front surface electrode. The design features a source pad electrode connected to a source region on the front surface of a semiconductor substrate, which forms a vertical MOS transistor. The front surface electrode is created using a plating method with a resist layer that has openings as a mask. The semiconductor substrate is then thinned by back-grinding, and a back surface electrode connected to a drain region is formed on the back surface. Both electrodes are made of metals with similar coefficients of linear expansion, preferably copper, and ideally have the same thicknesses.

Another notable patent is the manufacturing method of a semiconductor device, which focuses on forming a homogeneous film in a via hole created in a semiconductor device using the Bosch process. This method involves etching the semiconductor substrate from one surface to the other to create a via hole, followed by the removal of the mask layer. Scallops are then eliminated through dry etching to ensure a flat sidewall of the via hole. Finally, an insulation film and a barrier layer are homogeneously formed within the via hole.

Career Highlights

Throughout his career, Oikawa has worked with notable companies such as Sanyo Semiconductor Co., Ltd. and Semiconductor Components Industries, LLC. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Oikawa has collaborated with esteemed colleagues, including Koujiro Kameyama and Akira Suzuki. Their joint efforts have further advanced the field of semiconductor technology.

Conclusion

Takahiro Oikawa's innovative work in semiconductor technology has led to significant advancements in the industry. His patents reflect a deep understanding of the challenges faced in semiconductor manufacturing and design. Oikawa continues

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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