The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Apr. 04, 2008
Kikuo Okada, Gunma, JP;
Kojiro Kameyama, Gunma, JP;
Takahiro Oikawa, Gunma, JP;
SANYO Semiconductor Co., Ltd., Gunma, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
In a power MOS transistor, for example, a source electrode is formed so as to be commonly connected to a plurality of source regions formed on the front surface. Thus, a current density varies based on in-plane resistance of the source electrode, thereby providing the necessity of increasing the number of wires connecting the sources and a lead. In the invention, an electrode structure includes a copper plating layerformed on a pad electrodeby an electrolytic plating method, and a nickel plating layerand a gold plating layer formed so as to cover the upper and side surfaces of the copper plating layerby an electroless plating method.