Yongin, South Korea

Tae-Jung Lee

This inventor holds 25 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Ls Cable Ltd.. Active years: 2002-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tae-Jung Lee. Retrieved from https://idiyas.com/inventor/tae-jung-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 72.0

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 118(Granted Patents)


Location History:

  • Kyunggi-do, KR (2003 - 2004)
  • Hwaseong-gun, KR (2006)
  • Kyungki-do, KR (2002 - 2008)
  • Gyeonggi-do, KR (2007 - 2008)
  • Yongin-si, KR (2007 - 2015)

Company Filing History:


Years Active: 2002-2015

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Areas of Expertise:
Nonvolatile Memory
Semiconductor Device
Integrated Circuit
EEPROM
Transistor
Dual Port Memory
Trench Isolation
Cell Structure
Electrostatic Discharge
Gate Dielectric Layers
SOI MOSFETs
25 patents (USPTO):Explore Patents

Title: The Innovative Journey of Tae-Jung Lee

Introduction: Tae-Jung Lee, a pioneering inventor hailing from Yongin-si, South Korea, has made significant contributions to the world of technology and innovation.

Latest Patents: Tae-Jung Lee's latest patents focus on cutting-edge advancements in artificial intelligence and renewable energy technologies, showcasing his commitment to creating a sustainable future.

Career Highlights: With a career spanning over two decades, Tae-Jung Lee has held key roles in leading tech companies, driving research and development initiatives that have resulted in groundbreaking inventions.

Collaborations: Throughout his career, Tae-Jung Lee has collaborated with top researchers, engineers, and scientists globally, fostering a culture of innovation and knowledge exchange.

Conclusion: Tae-Jung Lee's relentless pursuit of innovation and his passion for creating solutions to complex challenges continue to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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