The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
May. 05, 2006
Dong-ryul Chang, Suwon-si, KR;
Tae-jung Lee, Yongin-si, KR;
Sung-hoan Kim, Suwon-si, JP;
Soo-cheol Lee, Seoul, KR;
Dong-ryul Chang, Suwon-si, KR;
Tae-jung Lee, Yongin-si, KR;
Sung-hoan Kim, Suwon-si, JP;
Soo-cheol Lee, Seoul, KR;
Samsung Elecronics Co., Ltd., , KR;
Abstract
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.