The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Sep. 07, 2006
Tae-jung Lee, Kyungki-do, KR;
Byung-sun Kim, Kyungki-do, KR;
Joon-hung Lee, Kyungki-do, KR;
Samsung'Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A dual port semiconductor memory device, including PMOS scan transistors, is provided. The dual port semiconductor memory device includes two PMOS transistors, two NMOS pull-down transistors, two NMOS pass transistors, and a PMOS scan transistor. The scan transistor being PMOS, noise margins can be improved. In addition, these seven transistors are arranged in two n-wells and 2 p-wells, while n-wells and p-wells are arranged in series and in alternating fashion. Therefore, the length of a memory cell along the minor axis of the memory cell is relatively short. This memory cell layout helps shorten the length of a bit line by arranging a pair of bitlines in parallel with well boundaries, i.e., in the direction of the short axis of the memory cell, and makes it possible to prevent crosstalk between a bitline and a complementary bitline by arranging conductive lines between the bitline and the complementary bitline.