The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jul. 01, 2011
Kee-in Bang, Chungbuk, KR;
Tae-jung Lee, Yongin-si, KR;
Myoung-kyu Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a device isolation region on a semiconductor substrate to define an active region, forming a gate electrode on the active region and the device isolation region across the active region, and forming at least one gate electrode opening portion in the gate electrode so as to overlap an edge portion of the active region, wherein the gate electrode opening portion is simultaneously formed with the gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile