Seoul, South Korea

Tae-eung Yoon

USPTO Granted Patents = 8 

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 121(Granted Patents)


Company Filing History:


Years Active: 2010-2013

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8 patents (USPTO):Explore Patents

Title: Tae-eung Yoon: Innovator in Memory Device Technology

Introduction

Tae-eung Yoon is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, holding a total of 8 patents. His work primarily focuses on enhancing the efficiency and integration of non-volatile memory technologies.

Latest Patents

Among his latest innovations is a phase-change memory device that includes a vertically-stacked capacitor. This device features a capacitor structure that offers large capacitance while occupying a small area. The design includes a phase change memory structure that is electrically connected to the vertically-stacked capacitor structure, which comprises a first and a second capacitor stacked and connected in parallel. Another notable patent is for a non-volatile memory device that can be extended in a stack structure, allowing for high integration. This device includes multiple electrodes and data storing layers, enhancing its functionality and efficiency.

Career Highlights

Tae-eung Yoon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His innovative designs and patents have positioned him as a key figure in the development of advanced memory solutions.

Collaborations

He has collaborated with notable colleagues, including June-mo Koo and Suk-Pil Kim, contributing to various projects that aim to advance memory device technology.

Conclusion

Tae-eung Yoon's contributions to the field of memory devices are noteworthy, with his patents reflecting a commitment to innovation and technological advancement. His work at Samsung Electronics Co., Ltd. continues to influence the future of memory technology.

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