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For the Inventor, By the Inventor

Seoul, South Korea

Tae-eung Yoon

This inventor holds 8 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tae-eung Yoon. Retrieved from https://idiyas.com/inventor/tae-eung-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 124(Granted Patents)


Company Filing History:

goldMedal8 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2010-2013

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8 patents (USPTO):Explore Patents
1. 8581363 - Phase-change memory device including a vertically-stacked capacitor and a method of the same (2013-11-12),
2. 8124968 - Non-volatile memory device (2012-02-28),
3. 8120006 - Non-volatile memory device (2012-02-21),
4. 7986545 - Non-volatile memory device and method of operating the same (2011-07-26),
5. 7948024 - Multi-layered, vertically stacked non-volatile memory device and method of fabrication (2011-05-24),
6. 7894265 - Non-volatile memory device and operation method of the same (2011-02-22),
7. 7885115 - Non-volatile memory devices and methods of operating non-volatile memory devices (2011-02-08),
8. 7796432 - Non-volatile memory device and method of operating the same (2010-09-14),

Title: Tae-eung Yoon: Innovator in Memory Device Technology

Introduction

Tae-eung Yoon is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, holding a total of 8 patents. His work primarily focuses on enhancing the efficiency and integration of non-volatile memory technologies.

Latest Patents

Among his latest innovations is a phase-change memory device that includes a vertically-stacked capacitor. This device features a capacitor structure that offers large capacitance while occupying a small area. The design includes a phase change memory structure that is electrically connected to the vertically-stacked capacitor structure, which comprises a first and a second capacitor stacked and connected in parallel. Another notable patent is for a non-volatile memory device that can be extended in a stack structure, allowing for high integration. This device includes multiple electrodes and data storing layers, enhancing its functionality and efficiency.

Career Highlights

Tae-eung Yoon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His innovative designs and patents have positioned him as a key figure in the development of advanced memory solutions.

Collaborations

He has collaborated with notable colleagues, including June-mo Koo and Suk-Pil Kim, contributing to various projects that aim to advance memory device technology.

Conclusion

Tae-eung Yoon's contributions to the field of memory devices are noteworthy, with his patents reflecting a commitment to innovation and technological advancement. His work at Samsung Electronics Co., Ltd. continues to influence the future of memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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