The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Sep. 18, 2009
Applicants:

Suk-pil Kim, Yongin-si, KR;

June-mo Koo, Seoul, KR;

Tae-eung Yoon, Seoul, KR;

Inventors:

Suk-pil Kim, Yongin-si, KR;

June-mo Koo, Seoul, KR;

Tae-eung Yoon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a non-volatile memory device having a stacked structure that is easily highly integrated and a method of economically fabricating the non-volatile memory device. The non-volatile memory device may include at least one first electrode and at least one second electrode that cross each other. At least one data storage layer may be disposed on a section where the at least one first electrode and the at least one second electrode cross each other. The at least one first electrode may include a first conductive layer and a first semiconductor layer.


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