The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Jun. 15, 2009
Suk-pil Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
June-mo Koo, Seoul, KR;
Tae-eung Yoon, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
June-mo Koo, Seoul, KR;
Tae-eung Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device is provided that includes; a first semiconductor layer extending in a first direction, a second semiconductor layer extending in parallel with and separated from the first semiconductor layer, an isolation layer between the first semiconductor layer and second semiconductor layer, a first control gate electrode between the first semiconductor layer and the isolation layer, a second control gate electrode between the second semiconductor layer and the isolation layer, wherein the second control gate electrode and first control gate electrode are respectively disposed at opposite sides of the isolation layer, a first charge storing layer between the first control gate electrode and the first semiconductor layer, and a second charge storing layer between the second control gate electrode and the second semiconductor layer.