The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Apr. 18, 2008
Tae-hee Lee, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
June-mo Koo, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Tae-eung Yoon, Seoul, KR;
Tae-hee Lee, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
June-mo Koo, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Tae-eung Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
The non-volatile memory device may include one or more main strings each of which may include first and second substrings which may separately include a plurality of memory cell transistors; and a charge supply line which may be configured to provide charges to or block charges from the first and second substrings of each of the main strings, wherein each of the main strings may include a first ground selection transistor which may be connected to the first substring; a first substring selection transistor which may be connected to the first ground selection transistor; a second ground selection transistor which may be connected to the second substring; and a second substring selection transistor which may be connected to the second ground selection transistor. A method of programming a target cell of the memory device includes activating selection transistors connected to a main string and substring of the target cell.