Syounosuke Ueno

Title: The Innovations of Syounosuke Ueno

Introduction

Syounosuke Ueno is a notable inventor based in Fujiidera, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on memory cell units and nonvolatile semiconductor storage devices.

Latest Patents

Ueno's latest patents include a memory cell unit, a nonvolatile semiconductor storage device that incorporates this memory cell unit, and a memory cell array driving method. The memory cell unit features a semiconductor substrate with a source diffusion layer and a column-shaped semiconductor layer. This design includes a drain diffusion layer and a low concentration impurity diffusion layer, facilitating a unique arrangement of memory cells that are connected in series. His nonvolatile semiconductor storage device comprises multiple memory cell unit groups, each containing NAND nonvolatile memory cell units. This innovative design allows for efficient selection of memory cells based on control gate lines and selection gate lines.

Career Highlights

Throughout his career, Ueno has worked with prominent companies, including Sharp Corporation. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced memory storage solutions.

Collaborations

Ueno has collaborated with notable individuals in the field, including Fujio Masuoka and Hiroshi Sakuraba. Their combined efforts have contributed to advancements in semiconductor technology.

Conclusion

Syounosuke Ueno's contributions to the field of semiconductor technology are significant and impactful. His innovative patents and collaborations highlight his role as a leading inventor in this domain.