Andover, MA, United States of America

Susan L Feindt

USPTO Granted Patents = 5 

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 22(Granted Patents)


Location History:

  • Boston, MA (US) (1995 - 1997)
  • Andover, MA (US) (2019 - 2022)

Company Filing History:


Years Active: 1995-2022

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5 patents (USPTO):Explore Patents

Title: **The Innovative Contributions of Susan L. Feindt**

Introduction

Susan L. Feindt is a prominent inventor based in Andover, MA, known for her significant contributions to the field of technology and engineering. With a remarkable total of five patents to her name, Feindt's work has notably impacted the development of integrated circuits and semiconductor technology. Her inventions reflect a deep understanding of the technical challenges in manufacturing and material integration.

Latest Patents

Feindt's latest patents showcase her innovative approach to enhancing circuit performance and reducing manufacturing complexities. One notable patent is a **Method of Transfer Printing**, which allows for circuits formed of different materials to be integrated on a single integrated circuit efficiently. The method involves creating tethers on dice regions of a first wafer, attaching a second wafer, processing the dice regions for separation, and ultimately transferring them to a third wafer. This technique presents exciting possibilities for advancing multi-material integration in electronic devices.

Another significant patent is the development of a **Heavily Doped Buried Layer to Reduce MOSFET Off Capacitance**. This invention pertains to a metal-oxide semiconductor field effect transistor (MOSFET) that includes carefully designed regions to minimize capacitance between the source and drain. By incorporating a buried region of a specific conductivity type, Feindt's design enhances the performance of MOSFET devices—offering potential benefits in power efficiency and speed for electronic components.

Career Highlights

Throughout her career, Susan Feindt has made substantial contributions to the technology sector, including her work with **Analog Devices, Inc.** and **Analog Devices International Unlimited Company**. Her experience in these prominent companies has shaped her innovative thinking and reinforced her expertise in semiconductor technology.

Collaborations

Susan has collaborated with notable colleagues, such as **David F. Beigel** and **William A. Krieger**. These collaborations not only demonstrate her ability to work effectively within teams but also highlight the synergy of ideas that contribute to successful innovations in her field.

Conclusion

In summary, Susan L. Feindt's inventive spirit and significant contributions to the field of technology, particularly in integrated circuits and semiconductors, underscore her status as a leading inventor. Her patented methods offer innovative solutions that enhance electronic device performance and manufacturing processes. As technology continues to evolve, Feindt's work will likely inspire future advancements in various applications.

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