Hwaseong, South Korea

Sung-Il Chang

This inventor holds 29 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2012-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung-Il Chang. Retrieved from https://idiyas.com/inventor/sung-il-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 29 

% Patents Active = 100.0

Average Co-Inventor Count = 3.9

ph-index = 7

Forward Citations = 104(Granted Patents)


Location History:

  • Suwon-si, KR (2013)
  • Gyeonggi-do, KR (2012 - 2014)
  • Hwaseong-si, KR (2013 - 2021)
  • Hwaseseong-si, KR (2016 - 2024)

Company Filing History:


Years Active: 2012-2024

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Areas of Expertise:
Three Dimensional Devices
Vertical Semiconductor Devices
Non-Volatile Memory
Memory Device Fabrication
Blocking Insulation Patterns
Energy Band Gaps
Dummy Memory Cell
Thermal Management
Charge Storage Patterns
Control Electrodes
Programming Methods
29 patents (USPTO):Explore Patents

Title: Innovations of Sung-Il Chang in Semiconductor Technology

Introduction

Sung-Il Chang is a prominent inventor based in Hwaseong-si, South Korea, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 29 patents, Chang's innovative designs are pushing the boundaries of how semiconductor devices are conceived and manufactured.

Latest Patents

Among his latest patents, Chang has developed three-dimensional semiconductor devices, which include a substrate and a specially designed buffer layer. This buffer layer boasts a material with etching selectivity in relation to the substrate, enabling a more efficient construction of multi-layer stacks that consist of alternating insulation and conductive patterns. Active patterns are innovatively integrated into this structure, providing considerable advancements in semiconductor device functionality.

Another pivotal patent involves the manufacturing methods of vertical semiconductor devices. This method entails forming insulation and sacrificial layers on a substrate in an alternating fashion to create a defined structure. The intricate etching process reveals the substrate and enables the formation of multiple semiconductor patterns, which are essential for the performance of vertical devices. Through these patents, Chang not only enhances the functionality of semiconductor devices but also streamlines their production processes.

Career Highlights

Sung-Il Chang's career at Samsung Electronics Co., Ltd. showcases his commitment to innovation in semiconductor technology. His extensive research and development efforts have yielded a wealth of patents that contribute to the company's leading position in the global technology landscape. Chang's work exemplifies the integration of practical engineering with advanced semiconductor design.

Collaborations

Collaboration is a key aspect of Chang's success. He has worked closely with notable peers, including Changhyun Lee and Byoungkeun Son. Their joint efforts have facilitated the exchange of ideas and expertise, leading to the development of cutting-edge technologies within the semiconductor field.

Conclusion

Sung-Il Chang's innovative spirit and technical prowess have made a lasting impact on semiconductor technology. His 29 patents reflect not just individual achievement but also a collaborative approach that drives further innovation in the industry. As technology continues to evolve, Chang's contributions will undoubtedly serve as a foundation for future advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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