The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Jun. 21, 2012
Sung-il Chang, Hwaseong-si, KR;
Young-woo Park, Seoul, KR;
Sung-Il Chang, Hwaseong-si, KR;
Young-Woo Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes a substrate having an active region defined by a device isolation region that has a trench and an air gap, a device isolation pattern positioned at a lower portion of the trench, a memory cell layer including a tunnel insulation layer, a trap insulation layer and a blocking insulation layer that are sequentially stacked on the active region and one of which extends from the active region toward the device isolation region encloses top of the air gap whose bottom is defined by a layer other than that of the top, and a control gate electrode positioned on the cell structure. The one of the insulation layer extending includes a recess at a region corresponding to the center of the air gap.