Nirasaki, Japan

Sunao Muraoka

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 154(Granted Patents)


Location History:

  • Yamanashi-ken, JP (1999)
  • Nirasaki, JP (2011 - 2012)

Company Filing History:


Years Active: 1999-2012

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4 patents (USPTO):Explore Patents

Title: Sunao Muraoka: Innovator in Silicon Processing Technologies

Introduction

Sunao Muraoka is a notable inventor based in Nirasaki, Japan. He has made significant contributions to the field of silicon processing, holding a total of 4 patents. His work focuses on innovative methods and devices that enhance the efficiency and effectiveness of silicon oxide film formation.

Latest Patents

Muraoka's latest patents include a method and apparatus for forming silicon oxide film. This invention involves loading an object with silicon on its surface into a processing chamber. A plasma of a processing gas containing oxygen and nitrogen is generated, which oxidizes the silicon on the surface, forming a silicon oxide film. Another significant patent is for a microwave plasma processing device and gate valve. This gate valve features a rectangular-shaped valve element that is larger than the opening of the processing chamber, ensuring effective hermetic sealing and incorporating a microwave reflecting mechanism.

Career Highlights

Throughout his career, Muraoka has worked with prominent companies in the semiconductor industry, including Tokyo Electron Limited and Varian Japan K.K. His experience in these organizations has allowed him to develop and refine his innovative technologies.

Collaborations

Muraoka has collaborated with esteemed colleagues such as Hideki Nagaoka and Masakazu Ban. Their combined expertise has contributed to advancements in silicon processing technologies.

Conclusion

Sunao Muraoka's contributions to the field of silicon processing are noteworthy, with his patents reflecting a commitment to innovation and excellence. His work continues to influence the industry and pave the way for future advancements.

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