Tokyo Electron Limited

Varian Japan K.k.t

Sunao Muraoka

Cai Zhong Tian

Hideki Nagaoka

Masakazu Ban

Junichi Kitagawa

Yoshiro Kabe

Masahito Ozawa

Susumu Kato

An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film.

Method and apparatus for forming silicon oxide film

A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member.

Microwave plasma processing device and gate valve for microwave plasma processing device

A gas is supplied to a second chamber so that the pressure in the second chamber is raised to a predetermined level. A communication passage is provided for internally connecting the first and second chambers. When the pressure in the first chamber attains the predetermined level, the gas is allowed to flow from the second chamber into the first chamber through the communication passage. A gas flow can be checked when an open-close door is opened to connect the chambers. Thus, there is no substantial gas flow, so that particles can be prevented from being flung up.

Apparatus and method for regulating pressure in two chambers

Growing community of inventors

Nirasaki, Japan

Sunao Muraoka