IDiyas

For the Inventor, By the Inventor

Austin, TX, United States of America

Steven K Park

USPTO Granted Patents = 13

Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 299(Granted Patents)


Location History:

  • Austin, TX (US) (2001 - 2003)
  • Cupertino, CA (US) (2001 - 2003)
  • Garden Grove, CA (US) (2019)
  • Anaheim, CA (US) (2021)

Company Filing History:

goldMedal10 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal3 out of 832,680 
Other
 patents

Years Active: 2001-2021

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13 patents (USPTO):
1. 10939793 - Cleaning system with handle (2021-03-09),
2. 10420449 - Handheld cleaning apparatus (2019-09-24),
3. 6548336 - Planarization of a polysilicon layer surface by chemical mechanical polish to improve lithography and silicide formation (2003-04-15),
4. 6537881 - Process for fabricating a non-volatile memory device (2003-03-25),
5. 6346466 - Planarization of a polysilicon layer surface by chemical mechanical polish to improve lithography and silicide formation (2002-02-12),
6. 6326268 - Method of fabricating a MONOS flash cell using shallow trench isolation (2001-12-04),
7. 6323516 - Flash memory device and fabrication method having a high coupling ratio (2001-11-27),
8. 6297143 - Process for forming a bit-line in a MONOS device (2001-10-02),
9. 6258669 - Methods and arrangements for improved formation of control and floating gates in non-volatile memory semiconductor devices (2001-07-10),
10. 6248635 - Process for fabricating a bit-line in a monos device using a dual layer hard mask (2001-06-19),
11. 6218227 - Method to generate a MONOS type flash cell using polycrystalline silicon as an ONO top layer (2001-04-17),
12. 6207502 - Method of using source/drain nitride for periphery field oxide and bit-line oxide (2001-03-27),
13. 6180538 - Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition (2001-01-30),
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