The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Oct. 25, 1999
Kenneth Au, Fremont, CA (US);
David K. Foote, San Jose, CA (US);
Steven K. Park, Cupertino, CA (US);
Fei Wang, San Jose, CA (US);
Bharath Rangarajan, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A process for fabricating a MONOS type Flash cell device having a periphery field oxide region and a bit-line region includes providing a semiconductor substrate and growing a barrier silicon oxide layer to overlie semiconductor substrate. Thereafter, a thick silicon nitride layer is formed to overlie the barrier silicon oxide layer. A mask and etch are performed at the periphery of the MONOS type cell to form a trench in the semiconductor substrate. The periphery field oxide region is formed by depositing silicon oxide to fill the trench. Thereafter, a mask and etch are performed at the core of the MONOS cell to form a trench in the semiconductor substrate. The bit-line oxide region is formed by depositing silicon oxide to fill the trench. Thereafter, the thick silicon nitride layer is removed. Since the periphery field oxide region and bit-line region are formed before the thick nitride layer is removed, the formation of an unwanted bird's beak is reduced.