For the Inventor, By the Inventor

Enter inventor name

Fremont, CA, United States of America

Kenneth W Au

USPTO Granted Patents = 8 (Patent Applications = 2)

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 149(Granted Patents)

Company Filing History:

7 out of 12,883

Advanced Micro Devices Corporation

1 out of 39,238

Fujitsu Corporation

1 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 2000-2001

Loading Chart...

8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6319775 - Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device (2001-11-20),

2. 6274433 - Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices (2001-08-14),

3. 6265268 - High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device (2001-07-24),

4. 6248628 - Method of fabricating an ONO dielectric by nitridation for MNOS memory cells (2001-06-19),

5. 6207502 - Method of using source/drain nitride for periphery field oxide and bit-line oxide (2001-03-27),

6. 6180538 - Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition (2001-01-30),

7. 6117730 - Integrated method by using high temperature oxide for top oxide and (2000-09-12),

8. 6034394 - Methods and arrangements for forming a floating gate in non-volatile (2000-03-07),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…