The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Oct. 25, 1999
Steven K. Park, Austin, TX (US);
Fei Wang, San Jose, CA (US);
Bharath Rangarajan, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A process for fabricating a MONOS Flash cell device having a bit-line includes providing a semiconductor substrate and growing a pad silicon oxide layer overlying the semiconductor substrate. Thereafter, a silicon nitride layer is formed overlying the pad silicon oxide layer. A shallow trench isolation etch is performed to form a trench in the semiconductor substrate. Thereafter, a silicon oxide is deposited to fill the trench. To planarize the silicon oxide to an upper of the silicon nitride layer, a chemical-mechanical-polishing process is performed. Thereafter, the silicon nitride layer and the pad silicon oxide layer are removed, and an oxide-nitride-oxide layer is deposited to overlie the semiconductor substrate.