The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Oct. 25, 1999
Steven K. Park, Cupertino, CA (US);
Arvind Halliyal, Sunnyvale, CA (US);
Hideki Komori, Santa Clara, CA (US);
Other;
Abstract
A process for fabricating an ONO structure for a MONOS type Flash cell includes growing a first silicon oxide layer over a semiconductor substrate. Thereafter, a silicon nitride layer is formed to overlie the first silicon oxide layer, and a polycrystalline silicon layer is deposited to overlie the silicon nitride layer. By utilizing the polycrystalline silicon layer as the top layer of the ONO structure, a resist layer can be cleaned more aggressively than if the top layer of the ONO structure were an oxide layer. A second silicon oxide layer overlies the polycrystalline layer, of the ONO structure. Since the second silicon oxide layer is deposited on top of polycrystalline silicon after the resist material is cleaned, some resist material can remain on the polycrystalline layer without degrading the performance of the MONOS type cell.