Austin, TX, United States of America

Stefan Wurm

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in EUV Lithography. Top assignees: Infineon Technologies Ag, Sematech, Inc., Infineon Technologies LLC. Active years: 2005-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stefan Wurm. Retrieved from https://idiyas.com/inventor/stefan-wurm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 20.0

Average Co-Inventor Count = 1.7

ph-index = 5

Forward Citations = 75(Granted Patents)


Location History:

  • Munich, DE (2005)
  • Dublin, CA (US) (2005 - 2006)
  • Austin, TX (US) (2007 - 2014)

Company Filing History:


Years Active: 2005-2014

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Areas of Expertise:
EUV Lithography
Dense Seed Layer
Optical Collectors
Reflectivity Monitoring
Photolithographic Mask
Capping Layers
Radiation Power
Semiconductor Fabrication
Reticle Stages
Electromagnetic Radiation
Thin Protective Coating
Integrated Circuit Arrangements
20 patents (USPTO):Explore Patents

Title: Innovations by Stefan Wurm in Semiconductor Technology

Introduction

Stefan Wurm is an innovative inventor based in Austin, TX, known for his contributions to semiconductor technology. With an impressive portfolio of 20 patents, Wurm has made significant advancements in materials and methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents, two notable inventions stand out:

1. **Dense seed layer and method of formation** - This patent describes a semiconductor device that incorporates a workpiece and a first material layer. The innovative aspect lies in the seed layer, which includes a chemisorbed monolayer of a second number of atoms. This specialized structure ensures a precise atomic ratio between first and second atoms at the surface, optimizing the device's functionality.

2. **Passivation of multi-layer mirror for extreme ultraviolet lithography** - This invention pertains to a reflector structure designed for extreme ultraviolet lithography (EUVL). The patent focuses on a capping layer that prevents oxidation of the multi-layer reflector, which is critical in maintaining the integrity of the optical components during lithographic processes. The capping layer can be formed using various methods, including reactive and non-reactive sputtering.

Career Highlights

Stefan Wurm has accumulated a wealth of experience by working with prestigious organizations in the semiconductor field. Notably, he has been employed at Infineon Technologies AG and Sematech, Inc., where he has honed his skills in semiconductor innovation and development.

Collaborations

Throughout his career, Wurm has collaborated with esteemed colleagues such as Siegfried Schwarzl and Vivek Bakshi. These partnerships have enabled the exchange of ideas and expertise, further driving advancements in his research.

Conclusion

Stefan Wurm's extensive patent portfolio and collaborations underscore his critical role in advancing semiconductor technology. His work not only reflects his ingenuity as an inventor but also contributes significantly to the progress of the industry. As he continues to innovate, Wurm remains a notable figure in the realm of semiconductor advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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