This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Corporation. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Sishir Bhowmick: Integrated Circuit Isolation Inventor
Introduction
Sishir Bhowmick is an inventor based in Hillsboro, Oregon, and works at Intel Corporation. His patent work addresses techniques for improving isolation in integrated circuit devices.
Latest Patents
Bhowmick is named on 1 patent, titled “Isolation in Integrated Circuit Devices.” The patent describes techniques for providing isolation in integrated circuit devices and computing systems. In some embodiments, a protective layer is placed on a structure before additional dielectric material is deposited, and the assembly is treated to form a dielectric layer around the structure.
Career Highlights
Bhowmick’s listed invention concerns semiconductor device fabrication, particularly the formation of dielectric layers that provide isolation within integrated circuits. This work is associated with his role at Intel Corporation.
Collaborations
Sang-Won Park and Dennis G. Hanken are identified as Bhowmick’s coworkers. Their shared professional context at Intel Corporation connects their work to the company’s broader semiconductor research and development environment.
Conclusion
Sishir Bhowmick’s patent on integrated circuit isolation reflects his contribution to semiconductor fabrication techniques through his work at Intel Corporation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile