The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Mar. 05, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Sang-Won Park, Portland, OR (US);
Dennis G. Hanken, Beaverton, OR (US);
Sishir Bhowmick, Hillsboro, OR (US);
Leonard C. Pipes, Beaverton, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/0228 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01); H01L 21/02337 (2013.01); H01L 21/02345 (2013.01);
Abstract
Disclosed herein are techniques for providing isolation in integrated circuit (IC) devices, as well as IC devices and computing systems that utilize such techniques. In some embodiments, a protective layer may be disposed on a structure in an IC device, prior to deposition of additional dielectric material, and the resulting assembly may be treated to form a dielectric layer around the structure.