Hillsboro, OR, United States of America

Sang-Won Park

This inventor holds 3 USPTO granted patents. Top assignee: Intel Corporation. Active years: 2016-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Won Park. Retrieved from https://idiyas.com/inventor/sang-won-park-e2dmz6kb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 33.3

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2016 - 2018)
  • Portland, OR (US) (2022)

Company Filing History:


Years Active: 2016-2022

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3 patents (USPTO):Explore Patents

Title: Innovations by Sang-Won Park

Introduction

Sang-Won Park is a notable inventor based in Hillsboro, OR (US). He has made significant contributions to the field of integrated circuit devices, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of semiconductor technologies.

Latest Patents

One of his latest patents is titled "Isolation in integrated circuit devices." This patent discloses techniques for providing isolation in integrated circuit (IC) devices, as well as IC devices and computing systems that utilize such techniques. In some embodiments, a protective layer may be disposed on a structure in an IC device prior to the deposition of additional dielectric material. The resulting assembly may be treated to form a dielectric layer around the structure.

Another significant patent is "Techniques for trench isolation using flowable dielectric materials." This patent outlines methods for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate. After curing, the resultant dielectric layer can undergo various treatments to modify its dielectric properties, density, and etch rate.

Career Highlights

Sang-Won Park is currently employed at Intel Corporation, a leading technology company known for its innovations in semiconductor manufacturing. His work at Intel has positioned him as a key contributor to advancements in integrated circuit technology.

Collaborations

He has collaborated with notable coworkers, including Dennis G. Hanken and Ritesh Jhaveri, who have also contributed to the field of semiconductor technology.

Conclusion

Sang-Won Park's innovative work in integrated circuit devices and his contributions to semiconductor technology highlight his importance as an inventor in the field. His patents reflect a commitment to advancing technology and improving the performance of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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