Siddharth Rajan

Title: Siddharth Rajan: Innovator in Semiconductor Technology

Introduction

Siddharth Rajan is a prominent inventor based in Columbus, OH (US). He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on advancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents are innovative designs for semiconductor devices featuring a compositionally graded layer. These patents detail methods of making and utilizing such devices. Another notable patent describes a low turn-on and high breakdown voltage lateral diode. This hybrid Schottky diode showcases forward characteristics determined by the metal-semiconductor junction, while the reverse characteristics and breakdown are influenced by the metal/dielectric/semiconductor junction. Experimental demonstrations of these hybrid Schottky diodes reveal significant improvements in breakdown performance, achieving an average breakdown field of up to 2.22 MV/cm with a reduced turn-on voltage of 0.47 V. This advancement enables state-of-the-art power switching figures of merit for GaN lateral Schottky diodes.

Career Highlights

Siddharth Rajan has worked with notable organizations such as the Ohio State Innovation Foundation and The Ohio State University. His experience in these institutions has allowed him to further his research and development in semiconductor technologies.

Collaborations

Throughout his career, Siddharth has collaborated with talented individuals, including Yuewei Zhang and Zane Jamal-Eddine. These partnerships have contributed to the success of his innovative projects.

Conclusion

Siddharth Rajan is a distinguished inventor whose work in semiconductor technology continues to push the boundaries of innovation. His patents and collaborations reflect his commitment to advancing the field and improving device performance.