The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Mar. 18, 2021
Applicant:

Ohio State Innovation Foundation, Columbus, OH (US);

Inventors:

Siddharth Rajan, Columbus, OH (US);

Mohammad Wahidur Rahman, Columbus, OH (US);

Hareesh Chandrasekar, Columbus, OH (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/182 (2013.01);
Abstract

Methods are provided of selectively obtaining n-type and p-type regions from the same III-Nitride layer deposited on a substrate without using diffusion or ion-implantation techniques. The III-Nitride layer is co-doped simultaneously with n-type and p-type dopants, with p-type dopant concentration higher than n-type dopant to generate p-n junctions. The methods rely on obtaining activated p-type dopants only in selected regions to generate p-type layers, whereas the rest of the regions effectively behave as an n-type layer by having deactivated p-type dopant atoms.


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