The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

May. 01, 2018
Applicant:

Ohio State Innovation Foundation, Columbus, OH (US);

Inventors:

Siddharth Rajan, Columbus, OH (US);

Yuewei Zhang, Columbus, OH (US);

Zane Jamal-Eddine, Columbus, OH (US);

Fatih Akyol, Corum/Merkez, TR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/06 (2010.01); H01L 33/38 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/06 (2013.01); H01L 33/385 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01);
Abstract

An example tunnel junction ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include a mesa structure having at least one of: an n-doped bottom contact region, a p-doped region, and a tunnel junction arranged in contact with the p-doped region. Additionally, a geometry of the mesa structure can be configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED. The mesa structure can be configured such that an emitted photon travels less than 10 μm before reaching the inclined sidewall.


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