The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Mar. 19, 2021
Applicant:
Ohio State Innovation Foundation, Columbus, OH (US);
Inventors:
Mohammad Wahidur Rahman, Columbus, OH (US);
Siddharth Rajan, Columbus, OH (US);
Assignee:
Ohio State Innovation Foundation, Columbus, OH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/87 (2006.01); H01L 29/872 (2006.01); H01L 29/40 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01);
Abstract
A hybrid Schottky diode is described herein where the forward characteristics are determined by the metal-semiconductor junction, and the reverse characteristics and breakdown are determined by the metal/dielectric/semiconductor junction. Experimental demonstration of such hybrid Schottky diodes shows significant improvement in the breakdown performance with average breakdown field up to 2.22 MV/cm with reduced turn on of 0.47 V and enable state-of-art power switching figure of merit for GaN lateral Schottky diodes.