This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Si Qiao: Innovator in Semiconductor Technology
Introduction: Si Qiao is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for manufacturing semiconductor devices.
Latest Patents: Si Qiao holds 1 patent for his invention titled "Semiconductor device and method for manufacturing same." This patent describes a method that includes providing a substrate and forming a stacked structure on it. The stacked structure consists of first material layers and gate layers that are alternatively stacked. It features a giant block (GB) region and a stair-step region. A third material layer is formed on the upper surfaces of both regions, followed by a fourth material layer that fills the stair-step region and covers the GB region. Additionally, at least one contact structure is located in the stair-step region, penetrating the third material layer and connecting with the respective gate layers.
Career Highlights: Si Qiao is currently employed at Yangtze Memory Technologies, Ltd. His work at this company has allowed him to further his research and development in semiconductor technology. His innovative methods have the potential to enhance the efficiency and performance of semiconductor devices.
Collaborations: Some of Si Qiao's notable coworkers include Zhaohui Tang and Yuting Zhou. Their collaboration has contributed to the advancement of technology within their field.
Conclusion: Si Qiao is a key figure in the semiconductor industry, with a focus on innovative manufacturing methods. His contributions are paving the way for future advancements in semiconductor technology.