The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Nov. 22, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Hao Zhang, Wuhan, CN;

Fandong Liu, Wuhan, CN;

Si Qiao, Wuhan, CN;

Yanhong Wang, Wuhan, CN;

Xiao Ding, Wuhan, CN;

Wei Liu, Wuhan, CN;

Wenyu Hua, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/0335 (2023.02); H10B 12/31 (2023.02);
Abstract

Example three-dimensional (3D) memory devices, methods, and memory systems for connecting vertical transistors and capacitors using connect structures are disclosed. One example method includes forming a first structure that includes multiple vertical transistors. A connect layer is formed over the first structure. The connect layer is etched to form connect structures, where each of the connect structures is coupled to a corresponding one of the vertical transistors. Multiple capacitors are formed over the connect layer, where each of the plurality of capacitors is coupled to a respective connect structure.


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