Wuxi, China

Shuxian Chen

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignees: Csmc Technologies Fab2 Co., Ltd., Southeast University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuxian Chen. Retrieved from https://idiyas.com/inventor/shuxian-chen-2cojldt3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.1

ph-index = 1


Company Filing History:


Years Active: 2026

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3 patents (USPTO):Explore Patents

Title: Shuxian Chen: Innovator in Semiconductor Manufacturing

Introduction

Shuxian Chen is a notable inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for manufacturing semiconductor devices.

Latest Patents

Shuxian Chen holds 1 patent for his invention titled "Method for manufacturing semiconductor device, and semiconductor device." This patent describes a comprehensive method that includes providing a semiconductor substrate of a first conductivity type and forming various regions within it. The process involves creating a deep well of a second conductivity type, channel regions, and drift regions, ultimately leading to the formation of source and drain regions.

Career Highlights

Shuxian Chen is currently employed at CSMC Technologies Fab2 Co., Ltd. His work at this company has allowed him to focus on advancing semiconductor manufacturing techniques. His expertise in this area has positioned him as a valuable asset in the industry.

Collaborations

Shuxian Chen collaborates with Huajun Jin, who is also a prominent figure in the field. Their partnership has fostered innovation and development in semiconductor technologies.

Conclusion

Shuxian Chen's contributions to semiconductor manufacturing highlight his role as an influential inventor. His patent and ongoing work continue to shape the future of technology in this critical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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