Yokohama, Japan

Shunsuke Kurachi

This inventor holds 5 USPTO granted patents. Top assignee: Sumitomo Electric Device Innovations, Inc.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shunsuke Kurachi. Retrieved from https://idiyas.com/inventor/shunsuke-kurachi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014-2023

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5 patents (USPTO):Explore Patents

Title: Shunsuke Kurachi: Innovator in Semiconductor Technology

Introduction

Shunsuke Kurachi is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His innovative work focuses on methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Kurachi's latest patents include a method for manufacturing a semiconductor device and a semiconductor device itself. The method involves forming a source electrode and a drain electrode on a nitride semiconductor layer that is situated on a SiC substrate. Additionally, it includes the formation of a gate electrode with a laminated structure comprising a Ni layer and an Au layer. This gate electrode is positioned between the source and drain electrodes. Furthermore, the method outlines the creation of a first metal film adjacent to the source electrode and a second metal film that contacts both the source electrode and the first metal film. The process also describes forming a hole that connects to the first metal film from the back surface of the SiC substrate, along with a metal via that extends from the back surface into the hole.

The semiconductor device patent describes a device that features a substrate with a primary surface and a secondary surface. The primary surface hosts a semiconductor active device. This device includes a base metal layer on the secondary surface and within a substrate via, where a vacancy is formed. An additional metal layer is placed on the base metal layer, exhibiting different wettability against solder compared to the base metal layer. This design allows the solder to be in contact with the base metal layer while being repelled by the additional metal layer.

Career Highlights

Shunsuke Kurachi is currently employed at Sumitomo Electric Device Innovations, Inc. His work at this company has positioned him as a key player in advancing semiconductor technologies. His patents reflect his commitment to innovation and excellence in the field.

Collaborations

Kurachi has collaborated with notable colleagues, including Tsutomu Komatani and Toshiyuki Kosaka. These partnerships have further enriched his contributions to semiconductor technology.

Conclusion

Shunsuke Kurachi is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. His innovative methods and collaborative efforts continue to shape the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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