The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Feb. 14, 2020
Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;
Shunsuke Kurachi, Yokohama, JP;
Tsutomu Komatani, Yokohama, JP;
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Abstract
Disclosure is a method for manufacturing a semiconductor device. The method includes forming a source electrode and a drain electrode on a nitride semiconductor layer formed on a main surface of a SiC substrate, forming a gate electrode having a laminated structure including a Ni layer and an Au layer on the Ni layer between the source electrode and the drain electrode on the nitride semiconductor layer and forming a first metal film having the same laminated structure as the gate electrode in a region adjacent to the source electrode with an interval therebetween, forming a second metal film to contact with the source electrode and the first metal film, forming a hole being continuous with the first metal film from a back surface of the SiC substrate, and forming a metal via being continuous with the first metal film from the back surface in the hole.