Kanagawa, Japan

Shunsuke Inoue

This inventor holds 62 USPTO granted patents and 1 published patent application and 3 EPO patents, primarily in Solid-State Imaging (CPC class 2573). Top assignees: Canon Kabushiki Kaisha, Cannon Kabushiki Kaisha, Other. Active years: 1993-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shunsuke Inoue. Retrieved from https://idiyas.com/inventor/shunsuke-inoue

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 62 

% Patents Active = 77.4

 

Average Co-Inventor Count = 2.4

ph-index = 26

Forward Citations = 1,867(Granted Patents)

Forward Citations (Not Self Cited) = 1,828(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hiratsuka, JP (1993)
  • Atsugi, JP (1993 - 1997)
  • Tokyo, JP (1998)
  • Kanagawa-ken, JP (2007 - 2008)
  • Yokohama, JP (1995 - 2012)
  • Kanagawa, JP (2005 - 2013)

Company Filing History:


Years Active: 1993-2013

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Areas of Expertise:
Solid-State Image Sensing
Photoelectric Conversion
Camera System
Liquid Crystal Display
Imaging System
High Sensitivity
Projection Display
Semiconductor Device
Integrated Circuit
Optical Element
Memory Device
62 patents (USPTO):Explore Patents

Title: Shunsuke Inoue: Innovator in Solid-State Imaging Technology

Introduction

Shunsuke Inoue is a notable inventor based in Kanagawa, Japan, renowned for his contributions to the field of solid-state image sensing technology. With a remarkable portfolio of 62 patents, Inoue has demonstrated his innovative prowess in the development of cutting-edge imaging devices.

Latest Patents

Among his latest inventions is a sophisticated solid-state image sensing device and camera system. This device features a plurality of pixels, each comprising a photodiode alongside two transistors. The photodiode integrates both first and second conductivity-type semiconductor regions, establishing a balance that allows for efficient signal transfer. Through innovative design, the first transistor's drain region is formed within the second-conductivity-type region, facilitating the movement of signal charge. Furthermore, the second transistor is equipped with strategically placed regions to optimize functionality, enhancing the overall performance of the imaging system.

Career Highlights

Inoue's professional journey includes a significant tenure at Canon Kabushiki Kaisha, where he has played a pivotal role in advancing imaging technologies. His extensive experience within such a reputable company has allowed him to refine his skills and align his innovations with market needs.

Collaborations

Throughout his career, Inoue has collaborated with esteemed colleagues like Mamoru Miyawaki and Tetsunobu Kohchi. These partnerships have likely fostered an environment of shared knowledge and expertise, further enhancing the impact of their collective work.

Conclusion

Shunsuke Inoue's contributions to the field of solid-state imaging are profound, supported by his extensive patent portfolio and collaborative efforts. His innovations not only advance technology but also influence the future of imaging devices, establishing him as a significant figure in this dynamic industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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