Solid-state image pick-up device and imaging system using the same

Abstract

The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeraldenotes an N-type cathode of a photodiode,denoting a surface P-type region for forming the photodiode into an embedded structure,denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference characterdenotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layerto enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrodeof the transfer MOS transistor is reflected by a first layer metalright above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficiently before entering into the floating diffusion section, thereby making the aliasing extremely small.