Canon Kabushiki Kaisha

Other

Cannon Kabushiki Kaisha

Shunsuke Inoue

Mamoru Miyawaki

Tetsunobu Kohchi

Takanori Watanabe

Shin Kikuchi

Hiroshi Yuzurihara

Takeshi Ichikawa

Mahito Shinohara

Tetsunobu Kochi

Yoshio Nakamura

Toru Koizumi

Shigetoshi Sugawa

Osamu Ikeda

Shigeyuki Matsumoto

Junichi Hoshi

Hidekazu Takahashi

Hayao Ohzu

Tetsuya Itano

Hiroshi Mizuno

Akira Ishizaki

Yasuhiro Sekine

Genzo Monma

Takao Yonehara

Kiyofumi Sakaguchi

Masanori Ogura

Yukihiko Sakashita

Masaru Sakamoto

Osamu Hamamoto

Yutaka Akino

Yoshihiko Fukumoto

Yasushi Kawasumi

Tomoya Yoneda

Osamu Koyama

Katsumi Kurematsu

Masaru Kamio

Hiroaki Hoshi

Shigeki Kondo

Yuzo Kataoka

Fumio Murooka

Tetsuo Asaba

Toshihiko Ichise

Tetsunobu Kouchi

Shiro Arikawa

Jun Nakayama

Yutaka Genchi

Toru Koizuki

A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

Solid-state image sensing device and camera system the same

Solid-state image sensing device and camera system using the same

The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeraldenotes an N-type cathode of a photodiode,denoting a surface P-type region for forming the photodiode into an embedded structure,denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference characterdenotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layerto enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrodeof the transfer MOS transistor is reflected by a first layer metalright above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficiently before entering into the floating diffusion section, thereby making the aliasing extremely small.

Solid-state image pick-up device and imaging system using the same

A solid-state image pickup device which has means of adding signals from plural pixels, which achieves a high S/N and a pickup device suitable for both static and moving image pickup. The device has a pixel unit having plural pixels arranged two-dimensionally and outputting pixel signals derived by photoelectric conversion, and has a first mode reading a pixel signal every pixel, and a second mode adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The device has plural output lines where signals from plural pixels arranged in one line are outputted respectively, and at least one amplifier is connected to each of the plurality of output lines. Gain at time of second mode readout is higher than gain at time of first mode readout.

Solid-state image pickup device and camera

A solid-state image pickup device includes an adder adding signals from pixels to achieve a high S/N, while performing both static image and moving image pickup. The device has a pixel unit having pixels arranged two-dimensionally and outputs pixel signals derived by photoelectric conversion. The device operates in a first mode of reading a pixel signal of every pixel, and a second mode of adding and reading a plurality of pixel signals. Variable gain column amplifiers perform readout at different gains in the first and second modes. The device also has output lines where output signals from the pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the output lines. The gain at the time of readout in the second mode is higher than the gain at the time of readout in the first mode.

A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.

Photoelectric conversion device and camera using photoelectric conversion device

A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.

Solid-state image sensing device

An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.

Image pickup apparatus

In a photoelectric conversion device having a plurality of pixel circuits, a read transistor, a main electrode of which is connected to a charge accumulation node of a photoelectric conversion unit in each pixel circuit is operated in a pentode region, so as to read out a photoelectric conversion signal of each diode to a floating diffusion.

Photoelectric conversion unit stacked structure

Solid-state image sensing device having high sensitivity and camera system using the same

A photoelectric conversion device is provided, in which pixels are arranged in an array. Each of the pixels includes a light receiving region, transistors, and an insulation film. The insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A reflection prevention film is arranged at least above the light receiving region, with the insulation film being arranged between the reflection prevention film and the light receiving region, and has a silicon nitride film. An interlayer insulation film is arranged on the reflection prevention film, and a second reflection prevention film is laminated between the reflection prevention film and the interlayer insulation film.

Photoelectric conversion device having an insulation film on a reflection prevention film, and camera using such photoelectric conversion device

Growing community of inventors

Kanagawa, Japan

Shunsuke Inoue