Nishishirakawa-gun, Japan

Shunichi Ikeda


Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 85(Granted Patents)


Location History:

  • Nishishirakawa-gun, JP (2002 - 2003)
  • Annaka, JP (2004)
  • Nishishiraka-gun, JP (2004)
  • Gunma, JP (2011)

Company Filing History:


Years Active: 2002-2011

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5 patents (USPTO):Explore Patents

Title: Shunichi Ikeda: Innovator in Light Emitting Devices

Introduction

Shunichi Ikeda is a prominent inventor based in Nishishirakawa-gun, Japan. He has made significant contributions to the field of light emitting devices, holding a total of 5 patents. His innovative work has paved the way for advancements in lighting technology.

Latest Patents

Ikeda's latest patents include a light emitting device and a method of fabricating the same. This device features a light emitting layer section with a double heterostructure composed of an n-type cladding layer, an active layer, and a p-type cladding layer, all made of AlGaInP. The design incorporates a bonding object layer with distinct p-type and n-type surfaces, facilitating efficient light extraction. Another notable patent involves a light-emitting device that utilizes an ITO electrode layer to apply drive voltage for light emission. This design allows light to pass through the ITO electrode layer, enhancing the device's performance.

Career Highlights

Throughout his career, Shunichi Ikeda has worked with notable companies, including Shin-Etsu Handotai Co., Ltd. His expertise in semiconductor technology has been instrumental in the development of advanced light emitting devices.

Collaborations

Ikeda has collaborated with esteemed colleagues such as Tadahiro Kato and Sadayuki Okuni. These partnerships have contributed to the innovative advancements in his field.

Conclusion

Shunichi Ikeda's contributions to light emitting devices exemplify his dedication to innovation and technology. His patents reflect a deep understanding of semiconductor materials and their applications in modern lighting solutions.

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