The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Sep. 26, 2002
Shunichi Ikeda, Annaka, JP;
Masato Yamada, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Shinji Nozaki, Kanagawa, JP;
Kazuo Uchida, Tokyo, JP;
Hiroshi Morisaki, Tsurugashima, JP;
Other;
Abstract
The light-emitting device has an ITO electrode layer for applying drive voltage for light emission to a light emitting layer section , where the light from the light emitting layer section is extracted as being passed through the ITO electrode layer . Between the light emitting layer section and the ITO electrode layer , an electrode contact layer composed of In-containing GaAs is located so as to contact with such ITO electrode layer , where occupied areas and unoccupied areas for the electrode contact layer are arranged in a mixed manner on the contact interface with the transparent electrode layer . The electrode contact layer can be obtained by annealing a stack , which comprises a GaAs layer ″ formed on the light emitting layer section and the ITO electrode layer formed so as to contact with the GaAs layer ″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer