Shin-etsu Handotai Co., Ltd.

Other

Shunichi Ikeda

Tadahiro Kato

Sadayuki Okuni

Nobuhiko Noto

Masato Yamada

Shinji Nozaki

Hiroshi Morisaki

Kazuo Uchida

Keiichi Okabe

Jun-ya Ishizaki

Jun Ikeda

Yukari Suzuki

Hisashi Oshima

Kenji Ohkura

A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.

Light emitting device and method of fabricating the same

The light-emitting device has an ITO electrode layer for applying drive voltage for light emission to a light emitting layer section , where the light from the light emitting layer section is extracted as being passed through the ITO electrode layer . Between the light emitting layer section and the ITO electrode layer , an electrode contact layer composed of In-containing GaAs is located so as to contact with such ITO electrode layer , where occupied areas and unoccupied areas for the electrode contact layer are arranged in a mixed manner on the contact interface with the transparent electrode layer . The electrode contact layer can be obtained by annealing a stack , which comprises a GaAs layer &Prime; formed on the light emitting layer section and the ITO electrode layer formed so as to contact with the GaAs layer &Prime;, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer

Light-emitting device and method for manufacturing the same

A double side grinding apparatus comprises a pair of grinding wheels ( ), work rotating device ( ) and moving device ( ). The apparatus operates to bring the grinding faces ( ) into contact with the respective work surfaces (a) to advance each grinding face to the position of a predetermined depth of cut by moving at least one of the grinding wheels ( ) while rotating the grinding wheels ( ) and rotating the work (W) by the device ( ) about an axis thereof as supported in a predetermined grinding position so that an outer periphery of the work (W) intersects outer peripheries of the grinding wheels ( ) with a center (c) of the work (W) positioned inwardly of the grinding faces ( ), stop each of the grinding wheels ( ) from advancing in the direction of depth of cut, move each of the grinding wheels ( ) and the work (W) by the moving device ( ) relative to each other in a direction parallel to the work surface (a) until the center (c) of the work (W) is positioned externally of the grinding faces ( ), and separate the grinding faces ( ) from the work surfaces (a). The surfaces of the work can be ground at the same time easily with diminished variations in the thickness of the work although the apparatus is small-sized.

Method and device for grinding double sides of thin disk work

In a double side simultaneous grinding machine, in which a plate-like workpiece is held and ground simultaneously on both a front surface and a back surface using a pair of grinding stones provided oppositely at both sides of the workpiece, a relative position between at least one of the center of thickness of the plate-like workpiece and the center of the holding means for holding the workpiece, and the center between stone surfaces of the pair of grinding stones is controlled during grinding. In a double side simultaneous grinding method, the generation of warpage of the plate-like workpiece is suppressed and degradation of warpage is prevented. Thereby, the plate-like workpiece can be processed to have high flatness on both sides. Further, the plate-like workpiece can be ground while a degree of warpage is controlled so that the workpiece is processed to have a warpage of a desired degree.

Double-sided simultaneous grinding method, double-sided simultaneous grinding machine, double-sided simultaneous lapping method, and double-sided simultaneous lapping machine

A method for producing a semiconductor wafer that yields a wafer having high flatness and back surface characteristics to address problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the production process. The method comprises flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting a front surface of the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%.

Semiconductor wafer and production method therefor

Growing community of inventors

Nishishirakawa-gun, Japan

Shunichi Ikeda