This inventor holds 5 USPTO granted patents. Top assignees: Nec Corporation, Nec Electronics Corporation. Active years: 2000-2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2000-2003
Title: The Innovations of Shuji Sone
Introduction
Shuji Sone is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on methods for manufacturing semiconductor devices, showcasing his expertise and innovative spirit.
Latest Patents
One of Shuji Sone's latest patents is a method of manufacturing a semiconductor device. This process involves forming an interlayer insulating film and a first via connected to a diffusion layer in a MOS transistor. Subsequently, a low dielectric constant film for a first layer copper interconnection is created, along with the first layer copper interconnection connected to the first via. The method continues with the formation of an etching stopper film, an interlayer insulating film, and a low dielectric constant film for a second layer copper interconnection. A via hole is then formed in the etching stopper film and the interlayer insulating film, followed by the creation of a groove in the low dielectric constant film for the second layer copper interconnection. A barrier metal layer is formed, and Ar ions are implanted at an energy of 50 keV with a dose of 1×10 cm. Finally, a second via and the second layer copper interconnection are formed, with annealing performed at a temperature of 400°C.
Another notable patent is related to a semiconductor device and the method for manufacturing the same. In this invention, a lower electrode film is designed to have a crystal grain laminated structure, which includes a granular structure crystal grain layer and a columnar structure crystal grain layer. A barrier layer is also formed as a granular structure crystal grain layer made of tantalum nitride, containing between 10 atm % and 50 atm % of nitrogen. This innovation allows for the creation of semiconductor devices that exhibit both excellent oxygen barrier performance and current conductivity.
Career Highlights
Shuji Sone has worked with notable companies such as NEC Corporation and NEC Electronics Corporation. His experience in these organizations has contributed to his development as a leading inventor in the semiconductor field.
Collaborations
Shuji Sone has collaborated with various professionals throughout his career, including his coworker Yoshitake Kato. Their joint efforts have likely led to advancements in semiconductor technology.
Conclusion
Shuji Sone's contributions to semiconductor technology through his innovative patents and career highlights
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

