Nec Corporation

Nec Electronics Corporation

Shuji Sone

Yoshitake Kato

An interlayer insulating film and a first via connected to a diffusion layer in a MOS transistor are formed on the diffusion layer. Then, a low dielectric constant film for a first layer copper interconnection, and the first layer copper interconnection connected to the first via are formed. Then, an etching stopper film, an interlayer insulating film, and a low dielectric constant film for a second layer copper interconnection are formed in this order. Then, a via hole is formed in the etching stopper film and the interlayer insulating film, and a groove is formed in the low dielectric constant film for the second layer copper interconnection. A barrier metal layer is then formed. Thereafter, Ar ions are implanted. At the time, the implantation energy is 50 keV, and the dose is 1&times;10 cm . A second via and the second layer copper interconnection are formed, and annealing is performed at a temperature of 400&deg; C.

Method of manufacturing semiconductor device

A lower electrode film is made to have a crystal grain laminated structure composed of a granular structure crystal grain layer and a columnar structure crystal grain layer. Also, a barrier layer is formed to be a granular structure crystal grain layer made of tantalum nitride containing 10 atm % or more and 50 atm % or less of nitrogen. Thereby, a semiconductor device comprising electrode films wherein both favorable oxygen barrier performance and current conductivity are compatible can be provided.

Semiconductor device and method for manufacturing the same

A thin-film capacitor having a perovskite-structured polycrystalline oxide thin-film as its dielectric, that exhibits an excellent insulation property is provided. This capacitor comprises a perovskite-structured, polycrystalline oxide thin-film, and top and bottom electrodes located at each side of the thin-film. The perovskite-structured, polycrystalline oxide thin-film has a general formula of ABO,, where A is at least one element selected from the group consisting of bivalent metallic elements, lead, and lanthanum, and B is at least one element selected from the group consisting of quadrivalent metallic elements. A ratio of (A/B) is in a range from 1.1 to 2.0. The oxide thin-film has granular crystal grains. The perovskite-structured, polycrystalline oxide thin-film is formed by forming a perovskite-structured, amorphous oxide thin-film and by crystallizing the perovskite-structured, amorphous oxide thin-film due to heat treatment.

Method of producing a thin-film capacitor

The present invention relates to a thin film capacitor that may be used as a stacked capacitor in a memory cell. In a thin film capacitor including a high dielectric constant layer sandwiched by two electrode layers, the high dielectric constant layer includes at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure.

Thin film capacitor including perovskite-type oxide layers having columnar structure and granular structure

A thin-film capacitor having a perovskite-structured polycrystalline oxide thin-film as its dielectric, that exhibits an excellent insulation property is provided. This capacitor comprises a perovskite-structured, polycrystalline oxide thin-film, and top and bottom electrodes located at each side of the thin-film The perovskite-structured, polycrystalline oxide thin-film has a general formula of ABO.sub.3, where A is at least one element selected from the group consisting of bivalent metallic elements, lead, and lanthanum, and B is at least one element selected from the group consisting of quadrivalent metallic elements. A ratio of (A/B) is in a range from 1.1 to 2.0. The oxide thin-film has granular crystal grains. The perovskite-structured, polycrystalline oxide thin-film is formed by forming a perovskite-structured, amorphous oxide thin-film and by crystallizing the perovskite-structured, amorphous oxide thin-film due to heat treatment.

Growing community of inventors

Tokyo, Japan

Shuji Sone