The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Jul. 06, 2000
Applicant:
Inventor:
Shuji Sone, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
A lower electrode film is made to have a crystal grain laminated structure composed of a granular structure crystal grain layer and a columnar structure crystal grain layer. Also, a barrier layer is formed to be a granular structure crystal grain layer made of tantalum nitride containing 10 atm % or more and 50 atm % or less of nitrogen. Thereby, a semiconductor device comprising electrode films wherein both favorable oxygen barrier performance and current conductivity are compatible can be provided.